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DATA SHEET
SILICON TRANSISTOR ARRAY
PA1434
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE
DESCRIPTION
The PA1434 is NPN silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.
26.8 MAX. 4.0
PACKAGE DIMENSION (in millimeters)
FEATURES
* Easy mount by 0.1 inch of terminal interval. * High hFE. Low VCE(sat).
hFE = 800 to 3200 (at IC = 0.5 A) VCE(sat) = 0.5 V
MAX.
10
(at IC = 2 A)
ORDERING INFORMATION
Part Number Package 10 Pin SIP Quality Grade Standard
2.54 1.4 0.6 0.1
1.4 0.5 0.1
PA1434H
1 2 3 4 5 6 7 8 910
Please refer to "Quality grade on NEC Semiconductor Device" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
2
CONNECTION DIAGRAM
3 4
5 6
7 8
9
ABSOLUTE MAXIMUM RATINGS (Ta = 25 C)
Collector to Base Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation (Ta = 25 C) Total Power Dissipation (Tc = 25 C) Junction Temperature Storage Temperature ** 4 Circuits Tj Tstg 150 -55 to +150 C C PT2** 28 W VCBO VEBO IC(DC) IC(pulse)* IB(DC) PT1** 60 60 7 3 6 0.6 3.5 V V V A/unit A/unit A/unit W Collector to Emitter Voltage VCEO
1
10 MIN. 10
2.5
PIN NO.
2, 4, 6, 8: Base (B) 3, 5, 7, 9: Collector (C) 1, 10: Emitter (E)
* PW 300 s, Duty Cycle 10 %
The information in this document is subject to change without notice.
Document No. IC-3480 Date Published September 1994 P Printed in Japan
(c)
1994
PA1434
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
CHARACTERISTIC Collector Leakage Current Emitter Leakage Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Turn On Time Storage Time Fall Time SYMBOL ICBO IEBO hFE1 hFE2 MIN. TYP. MAX. 10 10 UNIT TEST CONDITIONS VCB = 60 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 0.5 A VCE = 5 V, IC = 3 A IC = 2 A, IB = 20 mA IC = 2 A, IB = 20 mA IC = 2 A IB1 = -IB2 = 10 mA . . VCC = 50 V, RL = 25 . . See test circuit
A A
-- --
* *
800 500
3200
VCE(sat) * VBE(sat) * ton tstg tf 1 3 1.5
0.5 1.2
V V
s s s
* PW 350 s, Duty Cycle 2 % /pulsed
SWITCHING TIME TEST CIRCUIT
RL = 25 VIN IB1 IB2 PW PW = 50 s Duty Cycle 2 % VBB = -5 V T.U.T. VCC = 50 V 90 % Collector Current Wave Form ton IC 10 % tstg tf IC Base Current Wave Form IB1 IB2
2
PA1434
TYPICAL CHARACTERISTICS (Ta = 25 C)
DERATING CURVE OF SAFE OPERATING AREA 10 5
SAFE OPERATING AREA IC(pulse) MAX. IC(DC) MAX.
PW
Di Lim ssip ite atio n d
dT - Percentage of Rated Current - %
100
80
IC - Collector Current - A
= 10 30 0 s 30 s 0 s
s m 1 10
1 0.5
S/
bL
50
im
m
b S/
60
ite
s
Di ss at ip n io
d
d ite m Li
m Li
40
0.1 0.05
20 TC = 25 C Single Pulse 1 5 10 50
0.01 0 50 100 150 TC - Case Temperature - C
VCEO MAX.
100 4 Circuits Operation 3 Circuits Operation 2 Circuits Operation 1 Circuit Operation 50 75 100 125 150 50 20 10 5 2 1
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 30 NEC PA1434H
d ite
VCE - Collector to Emitter Voltage - V
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
PT - Total Power Dissipation - W
PT - Total Power Dissipation - W
4
20
4 Circuits Operation 3 Circuits Operation
3
2 Circuits Operation 1 Circuit Operation
2
10
1
0
25
50
75
100
125
150
0
25
Ta - Ambient Temperature - C
TC - Case Temperature - C
TRANSIENT THERMAL RESISTANCE 100 5 VCE 10 V 4 10
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
Rth(j-c) - Transient Thermal Resistance - C/W
IC - Collector Current - A
3
2
1
1
A IB = 0.5 m
0.1 0.1
1
10
100
0
1
2
3
4
5
PW - Pulse Width - ms
VCE - Collector to Emitter Voltage - V
3
PA1434
DC CURRENT GAIN vs. COLLECTOR CURRENT 10000 VCE(sat) - Collector Saturation Voltage - V VBE(sat) - Base Saturation Voltage - V VCE = 5 V Pulsed 5000 10 5 2 1
VBE(sat)
BASE AND COLLECTOR SATURATION VOLTAGE vs.COLLECTOR CURRENT IC = 100*IB Pulsed
hFE - DC Current Gain
2000
Ta = 12 5 C
0.5 0.2 0.1 0.05
VCE(sat)
1000 75 C 25 C -25 C
500 200 100 0.001
0.02 0.005 0.01 0.05 0.1 0.5 1 5 10 0.01 0.001 0.005 0.01 0.05 0.1 0.5 1 5 10
IC - Collector Current - A
IC - Collector Current - A
4
PA1434
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134
5
PA1434
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc.
M4 92.6

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